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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH1015HI DESCRIPTION With TO-3PML package. High voltage. High switching speed. APPLICATIONS Horizontal deflection for colour TV and monitors. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage Emitter-base voltage HAN INC Collector current (DC) Collector current -peak Base current Base current -peak SEM GE Open base Open collector tp<5ms OND IC TOR UC VALUE 1500 700 10 14 18 8 UNIT V V V A A A A W ae ae tp<5ms TC=25ae 11 70 150 -65~150 Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH1015HI CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEO(SUS) VCEsat Collector-emitter sustaining voltage IC=100mA; IB=0 IC=10A; IB=2A 700 V Collector-emitter saturation voltage 1.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=2A VCE=1500V ;VBE=0 Tj=125ae VEB=5V; IC=0 IC=10A ; VCE=5V Tj=100ae 7 5 1.5 0.2 2 0.1 14 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain Switching times resistive load ts Storage time tf Fall time THERMAL CHARACTERISTICS SYMBOL Rth j-case HAN INC SEM GE PARAMETER IC=10A;IB1=2A;IB2=-6A; VCC=400V OND IC TOR UC 1.5 |I 110 s ns MAX 1.8 UNIT ae /W Thermal resistance junction case 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH1015HI SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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